Intel and Micron Tuesday announced that their joint NAND flash manufacturing venture will begin using a more dense circuitry that will allow a terabit of data, or 128 gigabytes, to fit on a fingertip.
The joint venture, IMFT (IM Flash Technologies), said today it has created the world's first 20nm (nanometer), 128Gbit MLC (multilevel-cell) NAND flash die.
The new 20nm chips have the highest capacity for their form factor of any in the market today and are targeted for use in tablets, smartphones, and other consumer electronic devices.
The die doubles the capacity of the venture's 25nm lithography process, which has been used to make the 64Gbit dies used in today's SSDs (solid-state drives), tablets, and smartphones. Read more...